Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
MOSFET, N CH, 100V, 45A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:100V; On Resistance Rds(on):16.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:45A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V