가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSC190N15NS3GATMA1 | 60,000 | 5K | 23h | ||||||||
| Newark | BSC190N15NS3GATMA1 | 3,125 | 1 | Cut Tape | ||||||||
| Future Electronics | BSC190N15NS3GATMA1 | 40,000 | 5K | Tape & Reel | ||||||||
| Rutronik | TMOSP9607 | 50,020 | 5K | 4h | ||||||||
| Rochester Electronics | BSC190N15NS3GATMA1 | 39,850 | 21h |
대체 부품
Price @ 1000
$ 1.096
$ 1.289
$ 1.289
Stock
1,681,574
746,100
746,100
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
-
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
50 A
56 A
56 A
Threshold Voltage
3 V
-
-
Rds On Max
19 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
125 W
96 W
96 W
Input Capacitance
1.82 nF
1.37 nF
1.37 nF
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRFH5015TR2PBF
MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
설명
유통업체에서 제공한 Infineon BSC190N15NS3GATMA1에 대한 설명입니다.
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
Power MOSFET, N Channel, 150 V, 50 A, 19 mOhm, TDSON, 8 Pins, Surface Mount
OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.82 nF
Max Dual Supply Voltage150 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance19 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation125 W
Rds On Max19 mΩ
Rise Time53 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책