OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SuperSO8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 66