공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
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InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
NXP SemiconductorsPSMN7R5-25YLC,115
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설명
유통업체에서 제공한 Infineon BSC0908NS에 대한 설명입니다.
Trans MOSFET N-CH 34V 14A 8-Pin TDSON EP
Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC0908 - POWER FIELD-EFFECT TRANSISTOR,;
N-CHANNEL POWER MOSFET
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- Infineon Technologies
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- INFENION
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- INFIENON
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- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage34 V
Drain to Source Resistance12.7 mΩ
Drain to Source Voltage (Vdss)34 V
Fall Time2.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.22 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage34 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max8 mΩ
Rise Time2.6 ns
Turn-Off Delay Time16.4 ns
Turn-On Delay Time4.6 ns