Infineon BSC080N03LSGATMA1

Transistor MOSFET N-CH 30V 53A 8-Pin PG-TDSON T/R

2.5W 20V 16nC@ 10V 1N 30V 8m¦¸@ 10V 1.3nF@ 15V TDSON-8 , 5.9mm*5.15mm*1.27mm

30V 14A 35W 8mΩ@10V,30A 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSC080N03 - 12V-300V N-CHANNEL P

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)