가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | BSC077N12NS3GATMA1 | 5,000 | 5K | Tape & Reel | ||||||||
| Arrow Electronics | BSC077N12NS3GATMA1 | 14,759 | 1 | |||||||||
| DigiKey | BSC077N12NS3GATMA1CT-ND | 13,927 | 1 | Cut Tape | ||||||||
| Newark | BSC077N12NS3GATMA1 | 0 | 5 | Cut Tape | ||||||||
| Avnet | BSC077N12NS3GATMA1 | 0 | 5K | 1d |
공급망
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-09
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonAUIRFS4310Z
MOSFET, N-CH, 100V, 127A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTL110N10F7
N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STMicroelectronicsSTH110N10F7-2
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package
설명
유통업체에서 제공한 Infineon BSC077N12NS3GATMA1에 대한 설명입니다.
MOSFET Transistor, N Channel, 98 A, 120 V, 0.0066 ohm, 10 V, 3 V
139W 20V 2V@ 250uA 66nC@ 10V 1N 120V 7.7m¦¸@ 10V 95A 4.3nF@ 60V TDSON-8 , 5.9mm*5.15mm*1.27mm
Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON EP
MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
Power Field-Effect Transistor, 98A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC TRANSCEIVER FULL 4/5 28SSOP
MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13.4 A
Drain to Source Resistance7.7 mΩ
Drain to Source Voltage (Vdss)120 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Dual Supply Voltage120 V
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance7.7 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation139 W
Rds On Max7.7 mΩ
Rise Time24 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time26 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책