Infineon BSC061N08NS5ATMA1

Trans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R

OptiMOSTM5Power-Transistor,80V, PG-TDSON-8, RoHS

Power Field-Effect Transistor, 82A I(D), 80V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2.5W 20V 3.8V 27nC@ 10V 80V 6.1m¦¸@ 10V 1.9nF@ 40V SON

Infineon MOSFET BSC061N08NS5ATMA1

MOSFET, N-CH, 80V, 82A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.