유통업체에서 제공한 Infineon BSC016N03LSGATMA1에 대한 설명입니다.
MOSFET N-CH 30V 100A TDSON8 / Trans MOSFET N-CH 30V 100A Automotive 8-Pin TDSON EP T/R
MOSFET N-CH 30V 100A 125W TDSON-8 Pb-Free
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PFET, 32A I(D), 30V, 0.0023OHM,
2.5W(Ta),125W(Tc) 20V 2.2V@ 250¦ÌA 131nC@ 10 V 1N 30V 1.6m¦¸@ 30A,10V 100A 10nF@15V TDSON-8 5.9mm*5.15mm*1.27mm
BSC016N03 - 12V-300V N-CHANNEL P
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V