공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-03-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySUD42N03-3M9P-GE3
SUD42N03-3M9P-GE3 N-CHANNEL MOSFET TRANSISTOR, 107 A, 30 V, 3-PIN TO-252AA
InfineonIRFH3702TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
InfineonIRFH8334TRPBF
N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
VishaySUD45P03-09-GE3
Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
설명
유통업체에서 제공한 Infineon BSC011N03LSATMA1에 대한 설명입니다.
2.5KW 20V 2V 72nC 1N 30V 1.1m¦¸@ 10V 100A 4.7nF@ 15V TDSON(EP) , 5.15mm*590cm*1mm
Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R
MOSFETs; BSC011N03LS; INFINEON TECHNOLOGIES; 30 V; 37 A; 20 V; 96 W
MOSFET N-Channel 30V 37A OptiMOS TDSON8
Power Field-Effect Transistor, 204A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
OptiMOS™ 30V in SuperSO8 package, PG-TDSON-8, RoHS
Infineon SCT
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:96W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies BSC011N03LSATMA1.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)37 A
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Dual Supply Voltage30 V
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.1 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation96 W
Rise Time8.8 ns
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time6.7 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책