공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-12-31
LTD Date2015-06-30
관련 부품
Rochester ElectronicsBF2040RE6814
Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon BF2030E6814에 대한 설명입니다.
RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans RF FET N-CH 8V 0.04A Automotive 4-Pin SOT-143 T/R
23 dB Compliant Surface Mount 1.3 mm 1 mm 2.9 mm 800 MHz Lead Free
new, original packaged
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기술 사양
Physical
Case/PackageSOT-143
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)40 mA
Current Rating40 mA
Drain to Source Breakdown Voltage10 V
Drain to Source Voltage (Vdss)8 V
Frequency800 MHz
Gain23 dB
Gate to Source Voltage (Vgs)6 V
Max Frequency1 GHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Noise Figure1.5 dB
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation200 mW
Test Current10 mA
Test Voltage5 V
Voltage Rating8 V
Voltage Rating (DC)8 V
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm