가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BCV47E6327HTSA1 | 0 | 5 | Cut Tape | ||||||||
| Avnet | BCV47E6327HTSA1 | 0 | 18K | 1d | ||||||||
| Future Electronics | BCV47E6327HTSA1 | 0 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | BCV47E6327HTSA1 | 0 | 18K | |||||||||
| Farnell | BCV47E6327HTSA1 | 0 | 5 | Cut Tape | 10h |
대체 부품
Price @ 1000
$ 0.378
$ 0.088
Stock
3,909,538
1,511,406
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
Max Collector Current
500 mA
500 mA
Transition Frequency
170 MHz
170 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
2000
2000
Power Dissipation
360 mW
-
공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2023-09-30
LTD Date2024-09-30
관련 부품
Diodes Inc.MMBTA05-7-F
Bipolar (BJT) Single Transistor, NPN, 60 V, 500 mA, 350 mW, SOT-23, Surface Mount
Diodes Inc.BC817-40Q-13-F
TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3
ROHM2SCR502EBTL
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SCR522EBTL
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SCR523EBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Infineon BCV47E6327HTSA1에 대한 설명입니다.
BCV47 Series NPN 60 V 500 mA SMT Silicon Darlington Transistor - SOT-23-3
Trans Darlington NPN 60V 0.5A 360mW Automotive 3-Pin SOT-23 T/R
NPN SILICON DARLINGTON TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
1V @IC = 500 mA; IB = 50 mA; Tamb = 25 ¡ãC NPN 360mW 10V 100nA 80V 60V 500mA SOT-23 2.9mm*1.3mm*1mm
PNP Silicon Darlington Transistors | Summary of Features: High collector current; High current gain; Complementary types: BCV26, BCV46 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: For general AF applications
TRANSISTOR, BIPOLAR, NPN, 60V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 170MHz; Power Dissipation Pd: 360mW; DC Collector Current: 500mA; DC Current Gain hFE: 2000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current500 mA
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min2000
Max Breakdown Voltage60 V
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation360 mW
Schedule B8541210080
Transition Frequency170 MHz
Voltage Rating (DC)60 V
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책