대체 부품
Price @ 1000
$ 2.455
$ 0.917
Stock
241,339
896,523
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
89 A
89 A
Threshold Voltage
1 V
2 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
170 W
170 W
Input Capacitance
3.6 nF
3.6 nF
관련 부품
InfineonIRL3705NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V
InfineonIRF3205PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S
NXP SemiconductorsBUK9510-55A,127
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
설명
유통업체에서 제공한 Infineon AUIRL3705N에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 55V, 89A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)89 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.6 nF
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation170 W
Rds On Max10 mΩ
Rise Time140 ns
Threshold Voltage1 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm