대체 부품
Price @ 1000
$ 1.152
$ 1.152
Stock
37,220
121,479
121,479
Authorized Distributors
1
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
51 A
51 A
51 A
Threshold Voltage
2 V
-
-
Rds On Max
13.9 mΩ
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
80 W
80 W
80 W
Input Capacitance
1.42 nF
1.42 nF
1.42 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
관련 부품
InfineonIRFZ46ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 10.9 Milliohms;ID 51A;D2Pak;PD 82W;VGS +/-20
InfineonAUIRFS3806
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRFZ44ZS에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 51A Automotive 3-Pin(2+Tab) D2PAK Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,51A,D2PAK; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIENON
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.42 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity1000
Power Dissipation80 W
Rds On Max13.9 mΩ
Rise Time68 ns
Threshold Voltage2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width11.3 mm