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Price @ 1000
$ 1.043
$ 0.336
Stock
94,221
1,372,721
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
29 A
26 A
Threshold Voltage
2 V
4 V
Rds On Max
40 mΩ
40 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
68 W
56 W
Input Capacitance
700 pF
700 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
관련 부품
InfineonIRLZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
InfineonIRFZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
설명
유통업체에서 제공한 Infineon AUIRFZ34N에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 29A Automotive 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 55V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance40 mΩ
Package Quantity1000
Power Dissipation68 W
Rds On Max40 mΩ
Rise Time49 ns
Threshold Voltage2 V
Turn-Off Delay Time31 ns
Turn-On Delay Time7 ns
Dimensions
Height16.13 mm
Length10.75 mm
Width4.83 mm