가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | AUIRFR5305TR | 2,000 | 1 | |||||||||
| Rochester Electronics | AUIRFR5305TR | 521 | 1d | |||||||||
| DigiKey | 448-AUIRFR5305CT-ND | 521 | 1 | Cut Tape | ||||||||
| Farnell | AUIRFR5305TR | 7,281 | 5 | Cut Tape | 23h | |||||||
| Mouser | 942-AUIRFR5305TR | 7,863 | 1 | Tape & Reel |
대체 부품
Price @ 1000
$ 1.358
$ 0.576
$ 0.576
Stock
179,973
4,321,660
4,321,660
Authorized Distributors
5
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
-55 V
Continuous Drain Current (ID)
31 A
31 A
31 A
Threshold Voltage
-
-4 V
-4 V
Rds On Max
65 mΩ
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
110 W
89 W
89 W
Input Capacitance
1.2 nF
1.2 nF
1.2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
STMicroelectronicsSTD60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package
STMicroelectronicsSTD35NF06T4
N-Channel 60V - 0.018Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
InfineonAUIRLR2905ZTRL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
설명
유통업체에서 제공한 Infineon AUIRFR5305TR에 대한 설명입니다.
MOSFET, N-CH, 55V, 31A, TO-252; Available until stocks are exhausted Alternative available
Trans MOSFET P-CH 55V 31A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Advanced Planar TechnologyLow On-ResistanceDynamic dv/dt Rating175C Operating TemperatureFast SwitchingFully Avalanche RatedRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS CompliantAutomotive Qualified
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max65 mΩ
Rise Time66 ns
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책