대체 부품
Price @ 1000
$ 0.701
$ 0.701
Stock
69,715
414,487
414,487
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
2 V
-
-
Rds On Max
22 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
110 W
110 W
110 W
Input Capacitance
1.44 nF
1.44 nF
1.44 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-02-28
LTD Date2018-08-31
관련 부품
InfineonIRLR2905TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
InfineonIRLR2905PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
VishaySQD40N06-14L_GE3
Mosfet Transistor, N Channel, 40 A, 60 V, 0.011 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SQD40N06-14L-GE3
설명
유통업체에서 제공한 Infineon AUIRFR2607Z에 대한 설명입니다.
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
GENERAL PURPOSE POWER FET Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET,N CH,75V,42A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0176ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Power Dissipation Pd:110W; Voltage Vgs Max:20V
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Injection; Solenoid Injection
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity3000
PackagingRail/Tube
Power Dissipation110 W
Rds On Max22 mΩ
Rise Time59 ns
Threshold Voltage2 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm