가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRFR024N | 0 | 25 | Bulk | 10h | |||||||
| Farnell | AUIRFR024N | 10 | 1 | 4h | ||||||||
| Microchip USA | AUIRFR024N | 304 | 300 | Tray | 10h | |||||||
| Win Source | WS-AUIRFR024N | 21,000 | 5 | 19h | ||||||||
| Worldway Electronics | AUIRFR024N | 9,204 | 7 | Tube | 18h |
대체 부품
Price @ 1000
$ 4.8
$ 0.394
$ 0.394
Stock
163,611
3,198,627
3,198,627
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
2 V
4 V
4 V
Rds On Max
75 mΩ
75 mΩ
75 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
45 W
38 W
38 W
Input Capacitance
370 pF
370 pF
370 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFR024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
InfineonIRLR024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
InfineonIRLR024ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46 Milliohms;ID 16A;D-Pak (TO-252AA);PD 35W
설명
유통업체에서 제공한 Infineon AUIRFR024N에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 55V, 17A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max75 mΩ
Rise Time34 ns
Threshold Voltage2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm