대체 부품
Price @ 1000
$ 0.791
$ 0.337
Stock
156,869
1,379,389
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
19 A
19 A
Threshold Voltage
-2 V
-4 V
Rds On Max
-
100 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
68 W
56 W
Input Capacitance
620 pF
620 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
관련 부품
InfineonIRF9Z34NPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V
InfineonIRFZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
설명
유통업체에서 제공한 Infineon AUIRF9Z34N에 대한 설명입니다.
INFINEON AUIRF9Z34N MOSFET Transistor, P Channel, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET P-CH Si 55V 19A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Transistor Polarity:p Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pins Rohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
Power Dissipation68 W
Rise Time55 ns
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm