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이 부품
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Price @ 1000
$ 1.44
$ 1.095
Stock
247,887
1,228,896
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
5.3 mΩ
5.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
330 W
200 W
Input Capacitance
5.48 nF
5.48 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRF2805PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
InfineonIRF1405ZPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRF1405에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 169A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 55V, 75A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.48 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance5.3 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max5.3 mΩ
Rise Time190 ns
Threshold Voltage2 V
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Dimensions
Height20.56 mm
Length10.66 mm
Width4.82 mm