onsemi SI4884DY
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-01-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-04-06
LTD Date2007-10-06
설명
유통업체에서 제공한 onsemi SI4884DY에 대한 설명입니다.
Power Field-Effect Transistor, 11.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
MOSFETs SO8, NCH, 30V
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC N
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rise Time10 ns
Turn-Off Delay Time36 ns