공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2011-12-13
LTD Date2012-06-13
설명
유통업체에서 제공한 onsemi NDS8410A에 대한 설명입니다.
Trans MOSFET N-CH 30V 10.8A 8-Pin SOIC N T/R
MOSFETs 30V N-ChPowerTrench Single MOSFET
Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TAPE REEL / 30V N-CH. FET, 12 MO, SO8
This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC N
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)10.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.62 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max12 mΩ
Rise Time6 ns
Turn-Off Delay Time27 ns