공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
관련 부품
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
Diodes Inc.ZXMC3A17DN8TA
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
설명
유통업체에서 제공한 onsemi FDS8962C에 대한 설명입니다.
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R
30V Dual N & P-Channel PowerTrench® MOSFET
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ
TAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET
Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET
SMALL SIGNAL BIPOLAR TRANSISTOR
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance575 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2 W
Rds On Max30 mΩ
Rise Time13 ns
Turn-Off Delay Time14 ns