공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
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Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
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SUD42N03-3M9P-GE3 N-CHANNEL MOSFET TRANSISTOR, 107 A, 30 V, 3-PIN TO-252AA
VishaySIR466DP-T1-GE3
Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
설명
유통업체에서 제공한 onsemi FDMS8672S에 대한 설명입니다.
Trans MOSFET N-CH 30V 17A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N, SMD, MLP; Transistor type:PowerTrench; Voltage, Vds typ:30V; Current, Id cont:17A; Resistance, Rds on:0.005ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.5V; Case style:Power 56; Current, Idm pulse:200A; Marking, SMD:FDMS8672S; Pins, No. of:8; Power dissipation:2.5W; Termination Type:SMD; Transistor polarity:N; Voltage, Vds max:30V; Voltage, Vgs th max:3V
The FDMS8672S has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)17 A
Current Rating35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.515 nF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max5 mΩ
Rise Time17 ns
Turn-Off Delay Time27 ns
Voltage Rating (DC)30 V