공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-30
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
Diodes Inc.ZXTN10150DZTA
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 500mW 150MHz
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Tape & Reel (TR) Surface Mount NPN Bipolar (BJT) Transistor 160 @ 200mA 5V 1A 500mW 100MHz
설명
유통업체에서 제공한 Diodes Inc. ZXTN5551ZTA에 대한 설명입니다.
NPN 160 V 600 mA 1.2 W Surface Mount High Voltage Transistor - SOT-89
Trans GP BJT NPN 160V 0.6A 1200mW 4-Pin(3+Tab) SOT-89 T/R
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
new, original packaged
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Voltage (VCEO)160 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation1.2 W
Schedule B8541290080
Transition Frequency130 MHz
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm