가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | DXT5551DICT-ND | 157,809 | 1 | Cut Tape | ||||||||
| TME | DXT5551-13 | 600 | 1 | 14h | ||||||||
| Future Electronics | DXT5551-13 | 0 | 2500 | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | DXT5551-13 | 0 | 50 | Bulk | 4h | |||||||
| Avnet | DXT5551-13 | 0 | 2500 | 1d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-04
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.DXT2222A-13
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 750 mW, SOT-89, Surface Mount
ROHM2SD1767T100Q
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
onsemiKSD1621RTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 100nA ICBO 500mW 150MHz
onsemiKSC2883YTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 160 @ 500mA 2V 1.5A 1W 120MHz
설명
유통업체에서 제공한 Diodes Inc. DXT5551-13에 대한 설명입니다.
NPN 160 V 600 mA 0.75 W Surface Mount Transistor - SOT-89
Trans GP BJT NPN 160V 0.6A 1000mW 4-Pin(3+Tab) SOT-89 T/R
General Purpose Transistors NPN Ic=600mA Vceo=160V hfe=80~250 P=1.2W SOT89-3
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1 W
Schedule B8541290080
Transition Frequency100 MHz
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책