가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | ZXTN2018FCT-ND | 26,932 | 1 | Cut Tape | ||||||||
| TME | ZXTN2018FTA | 0 | 3K | 15h | ||||||||
| Avnet | ZXTN2018FTA | 0 | 3K | 19h | ||||||||
| Arrow Electronics | ZXTN2018FTA | 0 | 3K | |||||||||
| Farnell | ZXTN2018FTA | 0 | 1 | Custom Reel | 2h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-27
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXTN19060CFFTA
Bipolar (BJT) Single Transistor, NPN, 60 V, 5.5 A, 1.5 W, SOT-23F, Surface Mount
Diodes Inc.ZXTN07045EFFTA
Trans GP BJT NPN 45V 4A 2000mW 3-Pin SOT-23F T/R / TRANS NPN 45V 4A SOT23F-3
ROHMBC817-25T116
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
onsemiMMBTA05LT3
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
onsemiNSVBC817-16LT1G
TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)
설명
유통업체에서 제공한 Diodes Inc. ZXTN2018FTA에 대한 설명입니다.
60V 1.2W 100@2A,1V 5A NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
ZXTN2018F Series 140 V 5 A Surface Mount NPN General Purpose Transistor - SOT-23
Trans GP BJT NPN 60V 5A 1560mW 3-Pin SOT-23 T/R
210mV@ 300mA,6A NPN 1.56W 7V 20nA 140V 60V 5A SOT-23-3 1.12mm
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:1.2W; DC Collector Current:6A; DC Current Gain hFE:220; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Current Ic hFE:10mA; Max Current Gain Hfe:65; Max Current Ic:5A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:1W; Max Voltage Vce Sat:30mV; Min DC Current Gain Hfe:100; Min Hfe:100; Power Dissipation:1.2W; Reel Quantity:3000; SMD Marking:851; Tape Width:8mm; Termination Type:SMD; Transistor Type:Bipolar; Typ Hfe:220; Voltage Vcbo:140V; Current, Ic hfe -Do Not Use See ID 1182:10mA
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.2W; DC Collector Current:6A; DC Current Gain hFE:220hFE; Transistor Case S
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage45 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min15
Max Breakdown Voltage60 V
Max Collector Current5 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)60 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책