가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXTN07045EFFTA | 2,821 | 1 | Cut Tape | ||||||||
| DigiKey | ZXTN07045EFFCT-ND | 5,417 | 1 | Cut Tape | ||||||||
| TME | ZXTN07045EFFTA | 0 | 3K | 17h | ||||||||
| Avnet | ZXTN07045EFFTA | 0 | 3K | 1d | ||||||||
| RS (Formerly Allied Electronics) | ZXTN07045EFFTA | 0 | 10 | Bulk | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.DDTD142JC-7-F
DDTD Series 50 V 500 mA NPN Pre-Biased Surface Mount Transistor - SOT-23-3
Diodes Inc.DDTD113ZC-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 500 mA, 1 kohm, 10 kohm
Diodes Inc.DDTD123TC-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 500 mA, 2.2 kohm
ROHMBC817-25T116
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJV3113RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJV3114RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Diodes Inc. ZXTN07045EFFTA에 대한 설명입니다.
Trans GP BJT NPN 45V 4A 2000mW 3-Pin SOT-23F T/R / TRANS NPN 45V 4A SOT23F-3
ZXTN07045EFF Series NPN 45 V 4 A Silicon High Gain Transistor SMT - SOT-23F
Small Signal Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN 45V HIGH GAIN
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage280 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency190 MHz
Gain Bandwidth Product190 MHz
hFE Min70
Max Breakdown Voltage45 V
Max Collector Current4 A
Max Frequency190 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency190 MHz
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책