공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-01
Lifecycle StatusProduction (Last Updated: 6 months ago)
관련 부품
Diodes Inc.ZXMN6A25DN8TA
ZXMN6A25 Series 60 V 0.5 Ohm Dual N-Channel Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC4559DN8TA
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
설명
유통업체에서 제공한 Diodes Inc. ZXMP6A18DN8TA에 대한 설명입니다.
Transistor MOSFET Array Dual P-CH 60V 4.8A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel 60 V 0.055 Ohm Surface Mount Enhancement Mode MOSFET -SOIC-8
DiodesZetex PChannel EnhancedMOSTube, Vds=60 V, 4.8 A, SOICencapsulation, surface mount, 8Pin
MOSFET, PP CH, 60V, 4.8A, SO8; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.25W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel: -4.8A; Drain Source Voltage Vds, P Channel: -60V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating-4.6 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.58 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2.1 W
Rds On Max55 mΩ
Resistance55 mΩ
Rise Time5.8 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time55 ns
Turn-On Delay Time4.6 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.7 mm
Length5 mm
Width4 mm