공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-12
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
InfineonIRFR5410PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR5410TRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR5410TRLPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Diodes Inc.ZXMP7A17KTC
ZXMP7A17K Series P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - TO-252-3
Diodes Inc.ZXMP10A18KTC
Trans MOSFET P-CH 100V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 100V 3.8A DPAK
설명
유통업체에서 제공한 Diodes Inc. ZXMP10A16KTC에 대한 설명입니다.
Power MOSFET, P Channel, 100 V, 3 A, 235 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Trans MOSFET P-CH 100V 4.6A Automotive 3-Pin(2+Tab) DPAK T/R
MOSFET Operating temperature: -55...150 °C Housing type: DPAK Polarity: P Variants: Enhancement mode Power dissipation: 4.24 W
2.15W(Ta) 20V 4V@ 250µA 16.5nC@ 10 V 1individualPChannel 100V 235mΩ@ 2.1A,10V 3A 717pF@50V TO-252-3 SMD mount 2.52mm(height)
MOSFET, P, 100V, D-PAK; Transistor type:Enhancement; Voltage, Vds typ:-100V; Current, Id cont:4.6A; Resistance, Rds on:0.235ohm; Voltage, Vgs Rds on measurement:-10V; Voltage, Vgs th typ:-4V; Case style:D-PAK (TO-252); Current, Idm pulse:15.4A; Power, Pd:4.24W; Termination Type:SMD; Thermal resistance, junction to case a:29.45°C/W; Transistor polarity:P; Voltage, Vds max:100V
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight3.949996 g
Technical
Continuous Drain Current (ID)4.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance285 mΩ
Drain to Source Voltage (Vds)-100 V
Element ConfigurationSingle
Fall Time12.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance717 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation9.76 W
Manufacturer Package IdentifierTO252 (DPAK)
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation4.24 W
Rds On Max235 mΩ
Resistance235 mΩ
Rise Time5.2 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time4.3 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책