Infineon IRFR5410PBF

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W

Transistor MOSFET P Channel 100 Volt 13 Amp 3 Pin 2+ Tab Dpak

Single P-Channel 100 V 0.205 Ohm 58 nC HEXFET® Power Mosfet - TO-252AA

-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

MOSFET, P, -100V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):205mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:66W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Junction to Case Thermal Resistance A:1.9°C/W; On State resistance @ Vgs = 10V:205mohm; Package / Case:DPAK; Power Dissipation Pd:66W; Power Dissipation Pd:66W; Pulse Current Idm:5.2A; Termination Type:SMD; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V