대체 부품
Price @ 1000
$ 0.191
$ 0.269
Stock
4,044,624
13,104
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
1.1 A
1.1 A
Threshold Voltage
1 V
-1 V
Rds On Max
350 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
625 mW
625 mW
Input Capacitance
140 pF
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-07-22
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-10-28
LTD Date2027-04-28
관련 부품
Diodes Inc.ZXM61N03FTA
ZXM61N03F Series 30 V 1.4 A 220 mOhm N-Channel Enhancement Mode Mosfet-SOT-23-3
InfineonBSS316NH6327XTSA1
Power MOSFET, N Channel, 30 V, 1.4 A, 160 mOhm, SOT-23, 3 Pins, Surface Mount
Diodes Inc.ZXMP3A13FTA
Power MOSFET, Low Voltage, P Channel, 30 V, 1.6 A, 0.21 ohm, SOT-23, Surface Mount
Diodes Inc.ZXMN3A01FTA
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
설명
유통업체에서 제공한 Diodes Inc. ZXM61P03FTA에 대한 설명입니다.
ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount
30 V P-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating-1.1 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance140 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation806 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation625 mW
Rds On Max350 mΩ
Resistance350 mΩ
Rise Time2.9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time8.9 ns
Turn-On Delay Time1.9 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책