P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D