N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:320Ma; On Resistance Rds(On):3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Product Range:- Rohs Compliant: No