관련 부품
Diodes Inc.2DB1713-13
Power Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Diodes Inc.FCX1149ATA
Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.2DB1697-13
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
ROHM2SB1260T100R
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1188T100R
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
설명
유통업체에서 제공한 Diodes Inc. FCX717TA에 대한 설명입니다.
Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 12V 3A SOT89
Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
320mV@ 50mA,3A PNP 2W 5V 100nA 12V 12V 3A SOT-89-3 4.5mm*2.5mm*1.5mm
Bipolar Transistors - BJT PNP Low Saturation
TRANSISTOR, PNP, 12V, 3A, SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-12V; Transition Frequency Typ ft:110MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:300; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)12 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage320 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current-3 A
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency110 MHz
Gain Bandwidth Product110 MHz
hFE Min45
Max Breakdown Voltage12 V
Max Collector Current3 A
Max Frequency110 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation2 W
Schedule B8541290080
Transition Frequency110 MHz
Voltage Rating (DC)-12 V
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm