공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-03-15
LTD Date2021-03-15
관련 부품
Diodes Inc.2DB1713-13
Power Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1188T100R
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1132T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1132T100Q
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
설명
유통업체에서 제공한 Diodes Inc. 2DB1697-13에 대한 설명입니다.
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 12V 2A 2000mW 4-Pin(3+Tab) SOT-89 T/R
TRANSISTOR, PNP, SOT89, 0.9W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:900mW; DC Collector Current:1A; DC Current Gain hFE:270; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:180mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:140MHz; Hfe Min:270; Package / Case:SOT-89; Power Dissipation Pd:900mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)15 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage-65 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current-2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency140 MHz
Gain Bandwidth Product140 MHz
hFE Min270
Max Breakdown Voltage12 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityPNP
TerminationSMD/SMT
Transition Frequency140 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm