가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMP21D5UFB4-7B | 9,465 | 5 | Cut Tape | ||||||||
| Arrow Electronics | DMP21D5UFB4-7B | 70,000 | 10K | |||||||||
| Verical | DMP21D5UFB4-7B | 70,000 | 10K | |||||||||
| DigiKey | DMP21D5UFB4-7BDICT-ND | 16,817 | 1 | Cut Tape | ||||||||
| TME | DMP21D5UFB4-7B | 0 | 1 | 1d |
관련 부품
Diodes Inc.DMP21D0UFD-7
Mosfet, P-Ch, 20V, 1.14A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMP21D0UFD-7
Diodes Inc.DMN2400UFB4-7
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R / MOSFET N-CH 20V 750MA DFN1006H4
Diodes Inc.DMP21D0UFB4-7B
DMP21D0UFB4 Series 20V 770 mA 495 mOhm P-Ch Enhancement Mode Mosfet-X2-DFN1006-3
설명
유통업체에서 제공한 Diodes Inc. DMP21D5UFB4-7B에 대한 설명입니다.
Mosfet, P-Ch, 20V, 0.7A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP21D5UFB4-7B
P-Channel 20 V 700 mA Enhancement Mode Mosfet - DFN-3
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGS
Diodes Inc SCT
Trans MOSFET P-CH 20V 0.7A 3-Pin DFN T/R
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P CHANNEL, TRANS,20V 0.7A DFN3
MOSFET, P-CH, 20V, 0.7A, X2-DFN1006;
460mW(Ta) 8V 1V@ 250¦ÌA 0.5nC@ 4.5 V 1P 20V 970m¦¸@ 100mA,5V 700mA 46.1pF@10V 10000,DFN-1006-3 1mm*600¦Ìm*500¦Ìm
P-CH -20V 1000mOhm@4,5V DFN1006
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN
Contact PlatingGold
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time19.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance46.1 pF
Max Operating Temperature150 °C
Max Power Dissipation950 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation950 mW
Rds On Max970 mΩ
Resistance970 mΩ
Rise Time4.3 ns
Schedule B8541210080
Turn-Off Delay Time20.2 ns
Turn-On Delay Time8.5 ns
Dimensions
Height350 µm
Length1.05 mm
Width650 µm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책