가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN2250UFB-7B | 1,444 | 5 | Cut Tape | ||||||||
| DigiKey | 31-DMN2250UFB-7BCT-ND | 525 | 1 | Cut Tape | ||||||||
| TME | DMN2250UFB-7B | 0 | 10K | 7h | ||||||||
| Avnet | DMN2250UFB-7B | 0 | 10K | 16h | ||||||||
| Future Electronics | DMN2250UFB-7B | 0 | 10K | Tape & Reel |
관련 부품
Diodes Inc.DMN2300UFD-7
Mosfet, N-Ch, 20V, 1.21A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN2300UFD-7
설명
유통업체에서 제공한 Diodes Inc. DMN2250UFB-7B에 대한 설명입니다.
Mosfet, N-Ch, 20V, 1.35A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2250UFB-7B
Power MOSFET, N Channel, 20 V, 1.35 A, 0.17 ohm, X1-DFN1006, Surface Mount
Trans MOSFET N-CH 20V 1.35A Automotive 3-Pin X1-DFN T/R
500mW(Ta) 8V 1V@ 250¦ÌA 3.1nC@ 10 V 1N 20V 170m¦¸@ 1A,4.5V 1.35A 94pF@16V DFN 600¦Ìm*1mm*470¦Ìm
DMN2250UFB Series 20 V 1.35A N-Channel Enhancement Mode Mosfet - X1-DFN1006-3
MOSFET, N-CH, 20V, 1.35A, X1-DFN1006;
Low On-Resistance | MOSFET N-CH 20V 1.35A 3DFN
Small Signal Field-Effect Transistor, 1.35A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 8±V VGS
Diodes Inc SCT
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.35 A
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time25.4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance94 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max170 mΩ
Rise Time6.1 ns
Turn-Off Delay Time59.4 ns
Turn-On Delay Time4.3 ns
Dimensions
Height480 µm
Length1.08 mm
Width675 µm
규정 준수
환경 분류
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책