가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF76423D3S | 1,786 | 647 | |||||||||
| Rochester Electronics | HUF76423D3S | 8,936 | 22h | |||||||||
| Microchip USA | HUF76423D3S | 135 | 3500 | Tray | 16h | |||||||
| Win Source | WS-HUF76423D3S | 30,000 | 90 | 23h | ||||||||
| Worldway Electronics | HUF76423D3S | 6,688 | 7 | Tube | 22h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
관련 부품
onsemiHUFA76419D3S
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
onsemiHUFA76429D3S
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
InfineonIPD25N06S4L30ATMA2
Mosfet, N-Ch, 60V, 25A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD25N06S4L30ATMA2
설명
유통업체에서 제공한 onsemi HUF76423D3S에 대한 설명입니다.
PWR MOS ULTRAFET 60V/33A/0.035 OHMS N-CH LL TO-252AA
MOSFET N-CH 60V 20A TO252AA
MOSFETs 20a, 60V N-Channel 0.037Ohm
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.06 nF
Max Operating Temperature175 °C
Max Power Dissipation85 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation85 W
Rds On Max32 mΩ
Rise Time145 ns
Turn-Off Delay Time27 ns
Voltage Rating (DC)60 V