가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN4036LK3-13 | 1,934 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMN4036LK3-13 | 2,500 | 2500 | |||||||||
| Verical | DMN4036LK3-13 | 2,500 | 2500 | |||||||||
| DigiKey | DMN4036LK3-13DICT-ND | 863 | 1 | Cut Tape | ||||||||
| TME | DMN4036LK3-13 | 2,468 | 1 | 15h |
관련 부품
Diodes Inc.DMP4051LK3-13
P Channel 40 V 51 mO 8.9 W 14 nC Surface Mount Power MosFet - TO-252 (DPAK)
Diodes Inc.DMN3024LK3-13
Power MOSFET, N Channel, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
VishaySI7129DN-T1-GE3
SI7129DN-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 11.5 A, 30 V, 8-PIN POWERPAK 1212
STMicroelectronicsSTD19N3LLH6AG
Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFET H6 Power MOSFET in a DPAK package
설명
유통업체에서 제공한 Diodes Inc. DMN4036LK3-13에 대한 설명입니다.
Mosfet, N-Ch, 40V, 8.5A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN4036LK3-13
Trans MOSFET N-CH 40V 12.2A 3-Pin(2+Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=40 V, 12.2 A, DPAK (TO-252), , 3
MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL
Power Field-Effect Transistor, 8.5A I(D), 40V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CHANNEL 40V 12.2A TO252
MOSFET, N-CH, 40V, 8.5A, TO-252;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time9.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance453 pF
Max Operating Temperature150 °C
Max Power Dissipation8.49 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Rds On Max36 mΩ
Rise Time11.7 ns
Schedule B8541290080
Turn-Off Delay Time11.6 ns
Turn-On Delay Time3.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책