가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 31-DMN4030LK3-13CT-ND | 2,282 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMN4030LK3-13 | 844 | 612 | |||||||||
| Verical | DMN4030LK3-13 | 844 | 612 | |||||||||
| TME | DMN4030LK3-13 | 0 | 2500 | 6h | ||||||||
| Avnet | DMN4030LK3-13 | 0 | 2500 | 20h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-17
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.DMN3024LK3-13
Power MOSFET, N Channel, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
Diodes Inc.DMN4036LK3-13
Mosfet, N-Ch, 40V, 8.5A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN4036LK3-13
Diodes Inc.DMP4051LK3-13
P Channel 40 V 51 mO 8.9 W 14 nC Surface Mount Power MosFet - TO-252 (DPAK)
VishaySI7129DN-T1-GE3
SI7129DN-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 11.5 A, 30 V, 8-PIN POWERPAK 1212
설명
유통업체에서 제공한 Diodes Inc. DMN4030LK3-13에 대한 설명입니다.
DMN4030 Series 40 V 9.4 A N-Channel Enhancement Mode Mosfet - TO-252-3
Trans MOSFET N-CH 40V 13.7A 3-Pin(2+Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 9.4A I(D), 40V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)9.4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time10.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance604 pF
Max Operating Temperature150 °C
Max Power Dissipation8.9 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max30 mΩ
Rise Time12.4 ns
Schedule B8541290080
Turn-Off Delay Time13.8 ns
Turn-On Delay Time4.2 ns