가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN4027SSD-13 | 2,202 | 1 | Cut Tape | ||||||||
| DigiKey | 31-DMN4027SSD-13CT-ND | 2,171 | 1 | Cut Tape | ||||||||
| TME | DMN4027SSD-13 | 0 | 2500 | 8h | ||||||||
| Avnet | DMN4027SSD-13 | 0 | 2500 | 2d | ||||||||
| Future Electronics | DMN4027SSD-13 | 0 | 2500 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMP4025LSS-13
1.52W(Ta) 20V 1.8V@ 250¦ÌA 33.7nC@ 10 V 1P 40V 25m¦¸@ 3A,10V 6A 1.64nF@20V SOIC-8
Diodes Inc.ZXMC3F31DN8TA
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
InfineonIRF9410TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
Diodes Inc.DMC3028LSDX-13
Dual N/P-Channel 30 V 35/41 mOhm 6/10.9 nC 1.2 W Silicon SMT Mosfet - SOIC-8
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
설명
유통업체에서 제공한 Diodes Inc. DMN4027SSD-13에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 40V 7.1A 8-Pin SOIC T/R
2.14W 20V 3V@ 250¦ÌA 12.9nC@ 10V 2N 40V 27m¦¸@ 7A,10V 5.4A 604pF@20V SOIC-8 4.9mm*3.9mm*1.45mm
Dual N-Channel 40 V 0.047 Ohm 6.3 nC 2.14 W Silicon SMT Mosfet - SOIC-8
Mosfet, Dual, N-Ch, 40V, 5.4A Rohs Compliant: Yes |Diodes Inc. DMN4027SSD-13
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance604 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation2.1 W
Rds On Max27 mΩ
Rise Time3.1 ns
Turn-Off Delay Time15.4 ns
Turn-On Delay Time3.1 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm