가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | DMP58D0LFB-7 | 0 | 5 | Cut Tape | 9h | |||||||
| Farnell | DMP58D0LFB-7 | 0 | 5 | Cut Tape | 14h | |||||||
| Win Source | WS-DMP58D0LFB-7 | 156,120 | 840 | 20h | ||||||||
| Worldway Electronics | DMP58D0LFB-7 | 13,031 | 7 | Tape & Reel | 19h | |||||||
| Esaler Electronic | DMP58D0LFB-7 | 1 | 2d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-02-17
LTD Date2022-02-17
관련 부품
Diodes Inc.DMN62D0LFD-7
Mosfet, N-Ch, 60V, 0.31A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFD-7
Diodes Inc.DMN62D0LFB-7
Mosfet, N-Ch, 60V, 0.32A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFB-7
설명
유통업체에서 제공한 Diodes Inc. DMP58D0LFB-7에 대한 설명입니다.
Mosfet, P-Ch, 50V, 0.18A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP58D0LFB-7
MOSFET, P-CH, 50V, 0.18A, X1-DFN1006; Available until stocks are exhausted
470mW(Ta) 20V 2.1V@ 250¦ÌA 1P 50V 8¦¸@ 100mA,5V 180mA 27pF@25V DFN 1mm*600¦Ìm*500¦Ìm
Trans MOSFET P-CH 50V 0.31A Automotive 3-Pin DFN T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 50V VDS, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 0.18A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 50V, 0.18A, X1-DFN1006;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)180 mA
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)50 V
Fall Time32.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance27 pF
Max Operating Temperature150 °C
Max Power Dissipation1.22 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation1.22 W
Rds On Max8 Ω
Rise Time84.1 ns
Turn-Off Delay Time201.8 ns
Turn-On Delay Time30.7 ns