공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-10
Lifecycle StatusProduction (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Diodes Inc. DMN3016LSS-13에 대한 설명입니다.
DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8
Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 9.3A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 10.3A, SOIC;
30V 10.3A 1.5W 12mΩ@10V,12A N Channel SO-8 MOSFETs ROHS
1.5W(Ta) 20V 2.5V@ 250µA 25.1nC@ 10 V 1individualNChannel 30V 12mΩ@ 12A,10V 10.3A 1.415nF@15V SOIC-8 SMD mount 4.9mm*3.9mm*1.45mm
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.3 A
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vds)30 V
Input Capacitance1.415 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max12 mΩ
Schedule B8541290080