가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | DMB53D0UDW-7 | 1,980 | 5 | Cut Tape | 21h | |||||||
| element14 APAC | DMB53D0UDW-7 | 1,980 | 5 | Cut Tape | 14h | |||||||
| Component Stockers USA | DMB53D0UDW-7 | 24,034 | >1wk | |||||||||
| Win Source | WS-DMB53D0UDW-7 | 241,400 | 570 | 22h | ||||||||
| Esaler Electronic | DMB53D0UDW-7 | 3,000 | 21h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-02-17
LTD Date2022-02-17
관련 부품
Diodes Inc.BSS138DWQ-7
Mosfet, N-Ch, 50V, 0.2A, Sot-363 Rohs Compliant: Yes |Diodes Inc. BSS138DWQ-7
Diodes Inc.BSS138DWQ-13
Mosfet, N-Ch, 50V, 0.2A, Sot-363 Rohs Compliant: Yes |Diodes Inc. BSS138DWQ-13
설명
유통업체에서 제공한 Diodes Inc. DMB53D0UDW-7에 대한 설명입니다.
DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363
N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R
Transistor, Npn/N-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes |Diodes Inc. DMB53D0UDW-7
Small Signal Field-Effect Transistor, 0.16A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
250mW 12V 2N 50V 5¦¸ 160mA SOT-363 2.15mm*1.3mm*1mm
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight6.010099 mg
Technical
Collector Emitter Saturation Voltage300 mV
Continuous Drain Current (ID)160 mA
Current Rating160 mA
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)12 V
hFE Min200
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Schedule B8541210080
Voltage Rating50 V