가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DDTC113TE-7-F | 0 | 3K | 3d | ||||||||
| Mouser | 621-DDTC113TE-7-F | 5,705 | 1 | Tape & Reel | ||||||||
| Microchip USA | DDTC113TE-7-F | 206 | 3500 | Tray | 2d | |||||||
| Component Stockers USA | DDTC113TE-7-F | 58,643 | 11h | |||||||||
| Win Source | WS-DDTC113TE-7-F | 15,000 | 750 | 22h |
대체 부품
Price @ 1000
$ 0.164
$ 0.137
Stock
603,189
197,337
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-523
SOT-523
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-
-
hFE Min
100
100
Power Dissipation
-
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-11-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.DDTC124TE-7-F
DDTC Series 50 V 100 mA 150 mW NPN Pre-Biased Small Signal Transistor - SOT-523
Diodes Inc.DDTC123TE-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Diodes Inc. DDTC113TE-7-F에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R
300mV@ 1mA,10mA NPN - Pre-Biased 150mW 500nA 50V 100mA SOT-523 1.6mm*800¦Ìm*750¦Ìm
TRANS PREBIAS NPN 150MW SOT523
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-523
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight2.012816 mg
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min100
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Transition Frequency250 MHz
Voltage Rating (DC)50 V
Dimensions
Height750 µm
Length1.6 mm
Width800 µm