관련 부품
Diodes Inc.MMBTH24-7-F
Rf Transistor, Npn, 40V, 0.05A Rohs Compliant: Yes |Diodes Inc. MMBTH24-7-F
Diodes Inc.DNBT8105-7
Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 600 mW, SOT-23, Surface Mount
설명
유통업체에서 제공한 Diodes Inc. BFS17NTA에 대한 설명입니다.
BFS17N Series 11 V 50 mA NPN Surface Mount Transistor - SOT-23-3
General Purpose Transistors NPN Ic=50mA Vceo=11V hfe=56~180 P=350mW SOT23
NPN 350mW 3V 500nA 20V 11V 50mA SOT-23-3 2.9mm*1.3mm*980¦Ìm
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
TRANSISTOR, NPN, 11V, 0.05A, SOT-23 ROHS COMPLIANT: YES
Bipolar Transistors - BJT SINGLE NPN 3.2GHz 50mA 330mw
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage11 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)11 V
Continuous Collector Current50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Gain Bandwidth Product3.2 GHz
hFE Min56
Max Breakdown Voltage11 V
Max Collector Current50 mA
Max Frequency3.2 MHz
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Transition Frequency3.2 GHz
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책