공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1997-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiKST5179MTF
Tape & Reel (TR) Surface Mount NPN SINGLE RF Transistor 25 @ 3mA 1V 50mA 350mW 15dB
Diodes Inc.MMBTH24-7-F
Rf Transistor, Npn, 40V, 0.05A Rohs Compliant: Yes |Diodes Inc. MMBTH24-7-F
onsemiKSC2757YMTF
Tape & Reel (TR) Surface Mount NPN SINGLE RF Transistor 120 @ 5mA 10V 50mA 150mW 1.1GHz
설명
유통업체에서 제공한 onsemi MMBT5179에 대한 설명입니다.
MMBT5179 Series 12 V CE Breakdown .05 A NPN RF Transistor - SOT-23
Bipolar Transistors (BJT); MMBT5179; ON SEMICONDUCTOR; NPN; 3; 12 V; 50 mA
20nA 12V 225mW 50mA 25@3mA10V 900MHz 400mV@10mA1mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB
onsemi NPN, SOT-23, , 50 mA, -12 V
SOT-23 ELEC PN5179 MARKED 3C <AZ
MMBT5179 - RF SMALL SIGNAL BIPOL
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2.5 V
Frequency2 GHz
Gain15 dB
Gain Bandwidth Product900 MHz
hFE Min25
Max Breakdown Voltage12 V
Max Collector Current50 mA
Max Frequency2 GHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency900 MHz
Voltage Rating (DC)12 V
Dimensions
Height1.11 mm
Length2.92 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책