공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-19
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
onsemi2SB1202T-TL-E
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. ONSSPCDDENY1E7M;
설명
유통업체에서 제공한 Diodes Inc. 2DB1182Q-13에 대한 설명입니다.
32V 10W 120@500mA,3V 2A PNP TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
2DB11 Series PNP 1.2 W 32 V 2 A Surface Mount Power Transistor - TO-252-3
Trans GP BJT PNP 32V 2A 1200mW Automotive 3-Pin(2+Tab) TO-252 T/R
TRANS PNP 32V 2A TO252 / 32V PNP SURFACE MOUNT TRANSISTOR IN TO252
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage-800 mV
Collector Emitter Voltage (VCEO)32 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency110 MHz
Gain Bandwidth Product110 MHz
hFE Min120
Max Breakdown Voltage32 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation10 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation10 W
Transition Frequency110 MHz
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책