공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-08-17
LTD Date2023-02-17
관련 부품
ROHM2SD1918TLQ
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.ZXTN04120HKTC
Bipolar Array, Npn, 120V, 1.5A, To252 Rohs Compliant: Yes |Diodes Inc. ZXTN04120HKTC
설명
유통업체에서 제공한 Diodes Inc. DXT13003EK-13에 대한 설명입니다.
Bipolar Transistors - BJT 100V NPN 460V Trans 1.5A 3W 4MHz 400mV
Trans GP BJT NPN 460V 1.5A 3900mW 3-Pin(2+Tab) DPAK T/R
Power Bipolar Transistor, 1.5A I(C), 460V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
PWR HI VOLTAGE TRANSISTOR TO252 T&R 2.5K
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight1.799996 g
Technical
Collector Emitter Breakdown Voltage460 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)460 V
Continuous Collector Current1.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Gain Bandwidth Product4 MHz
hFE Min5
Max Breakdown Voltage460 V
Max Collector Current1.5 A
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Transition Frequency4 MHz