NXP Semiconductors MRFE6VP61K25HR6

RF Power Transistor, 1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

가격 및 재고

기술 사양

Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V

문서

NXP Semiconductors MRFE6VP61K25HR6에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Future Electronics
Datasheet23 pages10 years ago
Freescale Semiconductor
Datasheet23 pages11 years ago
Datasheet13 pages13 years ago
Technical Drawing2 pages11 years ago
Farnell
Datasheet5 pages10 years ago

재고 내역

3 month trend:
-79.59%

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP61K25HR6.

관련 부품

설명

유통업체에서 제공한 NXP Semiconductors MRFE6VP61K25HR6에 대한 설명입니다.

RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

제조업체 별칭

NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

기술 사양

Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V

문서

NXP Semiconductors MRFE6VP61K25HR6에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Future Electronics
Datasheet23 pages10 years ago
Freescale Semiconductor
Datasheet23 pages11 years ago
Datasheet13 pages13 years ago
Technical Drawing2 pages11 years ago
Farnell
Datasheet5 pages10 years ago

규정 준수

환경 분류
Radiation HardeningNo
RoHSCompliant
규정 준수 정책
Materials Sheet5 pages9 years ago
Rohs Statement1 pages11 years ago
Reach Statement3 pages11 years ago
Conflict Mineral Statement1 pages10 years ago
Rohs Statement1 pages12 years ago
Reach Statement2 pages8 years ago